Title :
Millimeter and Submillimeter Semiconductor Hot Electron Bolometer
Author :
Dobrovolsky, V.N. ; Sizov, F.F. ; Kamenev, Yu.E. ; Gumenjuk-Sichevska, J.V. ; Smirnov, A.B.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev
Abstract :
In this work Hg1-xCdxTe based THz semiconductor hot electron bolometer (SHEB) with the direct detection for millimeter and submillimeter region is considered. In the proposed device the electromagnetic radiation heats only electrons in a narrow gap semiconductor without its lattice inertial heating. It is shown that using this narrow-gap semiconductor diode instead of a photoconductor as a THz detector seems promising because of smaller currents and larger resistances of p-n junctions.
Keywords :
II-VI semiconductors; bolometers; cadmium compounds; hot carriers; mercury compounds; millimetre wave detectors; millimetre wave diodes; narrow band gap semiconductors; p-n junctions; submillimetre wave detectors; submillimetre wave diodes; Hg1-xCdxTe; SHEB; THz detector; direct detection; millimeter bolometer; narrow gap semiconductor; p-n junction diode; semiconductor hot electron bolometer; submillimeter bolometer; Bolometers; Electromagnetic heating; Electromagnetic radiation; Electrons; Lattices; Mercury (metals); Millimeter wave devices; Photoconducting devices; Semiconductor diodes; Tellurium;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294607
