Title :
Extremely low dark current InAlAs/InGaAlAs quaternary well superlattice APD
Author :
Watanabe, I. ; Makita, K. ; Tsuji, M. ; Torikai, T. ; Taguchi, K.
Author_Institution :
NEC Corp., Ibaraki, Japan
Abstract :
The authors report a wide-bandgap InGaAlAs quaternary well SL-APD (superlattice avalanche photodiode) for dark current reduction. The InGaAlAs well (E/sub g,well/=1.03 eV) SL-APD was experimentally confirmed to be a practical configuration for both low dark current (I/sub d/=80 nA at M=10) and low noise characteristics (F=3.8 dB at M=9), which indicates a potential for multi-gigabit rate region high-sensitivity optical receivers.<>
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; semiconductor quantum wells; semiconductor superlattices; 1.03 eV; 3.8 dB; 80 nA; InAlAs-InGaAlAs; dark current reduction; high-sensitivity optical receivers; low noise characteristics; quaternary well superlattice avalanche photodiode; wide bandgap APD; Absorption; Buffer layers; Dark current; Indium compounds; Indium gallium arsenide; Indium phosphide; Photoconductivity; Photonic band gap; Superlattices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235593
