مرکز منطقه ای اطلاع رساني علوم و فناوري - Controllability Of Dopant Ion Number In Single Ion Implantation

DocumentCode :

330729

Title :

Controllability Of Dopant Ion Number In Single Ion Implantation

Author :

Shinada, Takahiro ; Matsukawa, Takashi ; Ohdornari, I.

Author_Institution :

Waseda University

fYear :

1998

fDate :

13-16 July 1998

Firstpage :

253

Lastpage :

254

Keywords :

Annealing; Atomic measurements; Controllability; Electrons; Fluctuations; Implants; Ion beams; Ion implantation; Neutron spin echo; Testing;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location :

Kyoungju, South Korea

Print_ISBN :

4-930813-83-2

Type :

conf

DOI :

10.1109/IMNC.1998.730067

Filename :

730067

Link To Document :