New Method For Estimation Of The Grain Boundaries Contribution To The Resistance Of Highly Doped Polysilicon

Author

Spoutai, S.V. ; Chun, H.-G.

Author_Institution

Novosibirsk State Technical University

fYear

1998

fDate

13-16 July 1998

Firstpage

257

Lastpage

258

Keywords

Doping; Electron devices; Grain boundaries; Grain size; Inorganic materials; Physics; Resistors; Roentgenium; Semiconductor thin films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

DOI

10.1109/IMNC.1998.730070

Filename

730070

Link To Document