DocumentCode
3307327
Title
Design and analysis of GaN FET-based resonant dc-dc converter
Author
Dong-Sik Kim ; Dong-Myoung Joo ; Byoung-Kuk Lee ; Jong-Soo Kim
Author_Institution
Div. of Electr., Electron. & Commun. Eng., Daejin Univ., Pocheon, South Korea
fYear
2015
fDate
1-5 June 2015
Firstpage
2650
Lastpage
2655
Abstract
This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are analyzed and their improvement ideas are presented.
Keywords
DC-DC power convertors; III-V semiconductors; field effect transistors; gallium compounds; resonant power convertors; wide band gap semiconductors; zero voltage switching; FET-based resonant dc-dc converter; GaN; ZVS characteristics; DC-DC power converters; Gallium nitride; Logic gates; MOSFET; Silicon; Switches; GaN FET; PCB layout; high efficiency; resonant dc-dc converter; switching devices; wide bandgap device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location
Seoul
Type
conf
DOI
10.1109/ICPE.2015.7168196
Filename
7168196
Link To Document