Title :
Design and analysis of GaN FET-based resonant dc-dc converter
Author :
Dong-Sik Kim ; Dong-Myoung Joo ; Byoung-Kuk Lee ; Jong-Soo Kim
Author_Institution :
Div. of Electr., Electron. & Commun. Eng., Daejin Univ., Pocheon, South Korea
Abstract :
This paper presents a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant dc-dc converter based on GaN FET parameters are theoretically analyzed. To verify the validity of analysis, a 600W phase-shift full-bridge dc-dc converter is designed and implemented. The faulty turn-on and ZVS issue caused by GaN FET characteristics are analyzed and their improvement ideas are presented.
Keywords :
DC-DC power convertors; III-V semiconductors; field effect transistors; gallium compounds; resonant power convertors; wide band gap semiconductors; zero voltage switching; FET-based resonant dc-dc converter; GaN; ZVS characteristics; DC-DC power converters; Gallium nitride; Logic gates; MOSFET; Silicon; Switches; GaN FET; PCB layout; high efficiency; resonant dc-dc converter; switching devices; wide bandgap device;
Conference_Titel :
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location :
Seoul
DOI :
10.1109/ICPE.2015.7168196
