Frequency, energy and spatially resolved characterization of interface traps in metal-insulator-InP transistors based on noise and current drift measurements

The authors present a novel characterization technique for interface traps in metal-insulator-InP field effect transistors (MISFETs) based on a combination of low-frequency noise and long-term drift measurements of the drain current. It is shown that fundamental interface parameters (kinetics, and spatial and energy distributions of interface traps) can be directly extracted from rough data without any fitting parameters. This method has been used for the characterization of InP MISFETs where the insulator (SiO/sub 2/) was deposited by the distributed electron cyclotron resonance plasma-assisted chemical vapor deposition technique.<>