Status of the parasitic effects and reliability issues of InP electron devices

Author

Dumas, J.M. ; Lecrosnier, D.

Author_Institution

CNET, Lannion, France

fYear

1992

fDate

21-24 April 1992

Firstpage

214

Lastpage

217

Abstract

Parasitic effects, degradation mechanisms, and related lifetimes are reviewed for InP electron devices (mainly high electron mobility transistors, or HEMTs, and heterojunction bipolar transistors, or HBTs) and compared with those obtained from similar GaAs-based devices. The parasitic effects penalizing the IC integration of the InP-based HEMT are found to be very similar to those affecting the GaAs FET. Degradation mechanisms related to metallurgy have been clearly identified for InP electron devices. However, further investigations have to be carried out in order to assess the surface and bulk-induced degradations.<>

Keywords

III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; reliability; HBTs; HEMTs; IC integration; InP electron devices; bulk-induced degradations; degradation mechanisms; heterojunction bipolar transistors; high electron mobility transistors; lifetimes; parasitic effects; surface degradations; Degradation; Electron devices; FETs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MESFETs; MODFETs; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235601

Filename

235601