Title :
Determination of Fe/sup 2+/ and Fe/sup 3+/ concentrations in semi-insulating InP:Fe
Author :
Zach, F.X. ; Bourret, E.D. ; Bliss, D. ; Weber, E.R. ; Haller, E.E.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Abstract :
As the Fermi level in semi-insulating InP is close to the iron acceptor level, both charge states-Fe/sup 2+/ as well as Fe/sup 3+/ corresponding to the acceptor level occupied/unoccupied by an electron-are present. W. Meier et al. (1991) presented a method based on absorption measurements in the near-bandgap region of InP to determine the concentration of both charge states separately. In the present work, the authors compare iron concentrations obtained by this method with the results from intracenter absorption, DLTS (deep level transient spectroscopy), electron paramagnetic resonance, Hall effect measurements, and glow discharge mass spectroscopy. They present a new calibration for the optical absorption cross sections.<>
Keywords :
Hall effect; III-V semiconductors; deep level transient spectroscopy; impurity and defect absorption spectra of inorganic solids; impurity electron states; indium compounds; infrared spectra of inorganic solids; iron; mass spectroscopic chemical analysis; paramagnetic resonance of iron group ions and impurities; DLTS; Fe/sup 2+/ concentration; Fe/sup 3+/ concentration; Fermi level; Hall effect; InP:Fe; absorption measurements; acceptor level; calibration; charge states; electron paramagnetic resonance; glow discharge mass spectroscopy; intracenter absorption; near-bandgap region; optical absorption cross sections; semi-insulating; semiconductor; Absorption; Charge measurement; Current measurement; Electrons; Glow discharges; Hall effect; Indium phosphide; Iron; Mass spectroscopy; Paramagnetic resonance;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235606
