DocumentCode
3307471
Title
Traps in semi-insulating InP studied by thermally stimulated current spectroscopy
Author
Fang, Z.-Q. ; Look, D.C. ; Zhao, J.H.
Author_Institution
Wright State Univ., Dayton, OH, USA
fYear
1992
fDate
21-24 April 1992
Firstpage
634
Lastpage
637
Abstract
Traps in Fe-doped semi-insulating InP samples were studied by thermally stimulated current spectroscopy with IR (h nu >
Keywords
III-V semiconductors; electron traps; indium compounds; iron; photoconductivity; thermally stimulated currents; 250 to 380 K; 81 to 250 K; IR excitation; IR photocurrent quenching; InP:Fe; dark current; deep centers; metastable behavior; native defects; semi-insulating material; semiconductor; shallower traps; thermally stimulated current spectroscopy; traps; Current measurement; Electron traps; Gallium arsenide; Indium phosphide; Iron; Lighting; Metastasis; Photoconductivity; Physics; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235607
Filename
235607
Link To Document