Title :
High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers
Author :
Blez, M. ; Kazmierski, C. ; Mathoorasing, D. ; Quillec, M. ; Gilleron, M. ; Nakajima, H. ; Sermage, B.
Author_Institution :
Lab. de Bagneux, CNET, France
Abstract :
The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. They present an improved set of characteristics on 6-well InGaAs/InGaAlAs DFB BRS lasers, suitable for 10-Gb/s operation. An open eye diagram observed under 10-Gb/s strong signal modulation confirms the potential interest of the aluminium system for low chirp lasers modulated at high bit rates.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; 1.55 micron; GaInAs-AlGaInAs; MQW DFB lasers; buried ridge structure lasers; high speed narrow linewidth; linewidth enhancement factor; low chirp lasers; multiquantum well; open eye diagram; performances; Chirp; High speed optical techniques; Holographic optical components; Holography; Indium gallium arsenide; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235611
