High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers

Author

Blez, M. ; Kazmierski, C. ; Mathoorasing, D. ; Quillec, M. ; Gilleron, M. ; Nakajima, H. ; Sermage, B.

Author_Institution

Lab. de Bagneux, CNET, France

fYear

1992

fDate

21-24 April 1992

Firstpage

618

Lastpage

621

Abstract

The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. They present an improved set of characteristics on 6-well InGaAs/InGaAlAs DFB BRS lasers, suitable for 10-Gb/s operation. An open eye diagram observed under 10-Gb/s strong signal modulation confirms the potential interest of the aluminium system for low chirp lasers modulated at high bit rates.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor lasers; 1.55 micron; GaInAs-AlGaInAs; MQW DFB lasers; buried ridge structure lasers; high speed narrow linewidth; linewidth enhancement factor; low chirp lasers; multiquantum well; open eye diagram; performances; Chirp; High speed optical techniques; Holographic optical components; Holography; Indium gallium arsenide; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235611

Filename

235611