Interdigitated electrode and coplanar waveguide InAlAs/InGaAs MSM photodetectors grown by LP MOVPE

Author

Buchali, F. ; Gyuro, I. ; Scheffer, F. ; Prost, W. ; Block, M. ; Wendorff, W. ; Heymann, G. ; Tegude, F.J. ; Speier, P. ; Jager, D.

Author_Institution

Duisburg Univ., Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

596

Lastpage

599

Abstract

The authors report on the layout and performance of interdigitated electrode and coplanar waveguide metal-semiconductor-metal (MSM) photodetectors based on the InAlAs/InGaAs material system and grown by low pressure metal-organic vapor phase epitaxy (LP-MOCVD). Both the low-capacitance interdigitated electrode and the impedance-matched coplanar waveguide structure exhibit a dynamic behavior with 35-ps rising time, but with a slow turn-off behavior (full width at half maximum=225 ps), which is determined by the transit time of the photogenerated carriers. The coplanar waveguide has an active area of 1.6*10/sup -3/ cm/sup 2/ and a space charge capacitance of 200 pF. The results for this waveguide demonstrate that an impedance-matched large-area device may work without RC-limitation. Using this concept, high-speed operation is no longer limited to small-area devices.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; semiconductor growth; vapour phase epitaxial growth; InAlAs-InGaAs; LP MOVPE; RC-limitation; coplanar waveguide; dynamic behavior; high-speed operation; impedance-matched; interdigitated electrode; large-area device; layout; low pressure metal-organic vapor phase epitaxy; low-capacitance; metal-semiconductor-metal photodetectors; performance; photogenerated carriers; small-area devices; space charge capacitance; Capacitance; Coplanar waveguides; Electrodes; Epitaxial growth; Impedance; Indium compounds; Indium gallium arsenide; Inorganic materials; Photodetectors; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235616

Filename

235616