Title :
Electrical characterization of 1 MeV electron irradiated ITO/InP structures
Author :
Luo, J.K. ; Thomas, H. ; Pearsall, N.M.
Author_Institution :
Sch. of Electr., Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
Abstract :
MOCVD (metal-organic chemical vapor deposited) InP diodes showed a small carrier removal rate and subsequently were more resistive to radiation than LEC substrates. 1 MeV electron irradiation induced five hole traps and six electron traps with densities of 10/sup 14/ approximately 3*10/sup 15/ cm/sup -3/. Defects H3, H4 and E2 are found not to be the most important cause of cell degradation, but some unknown defects. The threshold annealing temperatures were found to be approximately 85 degrees C for defects H7, E8, and E9, approximately 100 degrees C for H3 and H4, and >160 degrees C for E2, E3, and E4. The injection annealing of H4 was confirmed in ITO (indium tin oxide)/InP structures with an activation energy of 0.27 eV.<>
Keywords :
CVD coatings; III-V semiconductors; annealing; defect electron energy states; electron beam effects; electron traps; hole traps; indium compounds; semiconductor diodes; 1 MeV; 100 degC; 85 degC; ITO-InP; InP; InSnO-InP; LEC substrates; MOCVD; activation energy; carrier removal rate; cell degradation; defects; diodes; electrical characterization; electron irradiated; electron traps; hole traps; injection annealing; semiconductor structures; threshold annealing temperatures; Annealing; Charge carrier processes; Chemicals; Degradation; Diodes; Electron traps; Indium phosphide; Indium tin oxide; MOCVD; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235618
