DocumentCode :
330766
Title :
Method For Evaluating The Interface Of Semiconductor Heterojunctions Using A Free Electron Laser
Author :
Nishi, K. ; Ishizu, A. ; Nagai, A. ; Tomimasu, T.
Author_Institution :
Free Electron Laser Research Institute, Inc.
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
327
Lastpage :
328
Keywords :
Free electron lasers; Gallium arsenide; Heterojunctions; Nanoscale devices; Optical pumping; Photoconductivity; Power lasers; Semiconductor lasers; Wavelength measurement; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730105
Filename :
730105
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330766
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