Title :
Direct Lithography On Hydrogen-Terminated Silicon Surface Using Two-Dimensional Hydrogen Analysis
Author :
Ishikawa, K. ; Yoshimura, M. ; Ueda, K.
Author_Institution :
Toyota Technological Institute
Keywords :
Atomic layer deposition; Electron beams; Electrostatic discharge; Hafnium; Hydrogen; Lithography; Silicon; Solids; Spectroscopy; Surface cleaning;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730106
