DocumentCode :
330768
Title :
A High Performance Polycrystalline Silicon Thin Film Transistor Using A Metal Induced Crystallization With A Ni Solution
Author :
Yoon, Soo Young ; Kim, Sung Ki ; Oh, Jae Young ; Choi, Young Jin ; Shon, Woo Sung ; Kim, Chae Ok ; Jang, Jin
Author_Institution :
Kyung Hee University
fYear :
1998
fDate :
13-16 July 1998
Firstpage :
331
Lastpage :
332
Keywords :
Annealing; Contamination; Crystallization; Microwave integrated circuits; Optical films; Physics; Plasma temperature; Silicon; Temperature sensors; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
Type :
conf
DOI :
10.1109/IMNC.1998.730107
Filename :
730107
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330768
