DocumentCode :
3307697
Title :
Modeling and simulation of a MOSFET transistor in Verilog-A considering parasite elements
Author :
Cruz Dominguez Ghandy, Vladimir ; Tlapa Juarez, Manuel ; Bonilla Barranco, Hector ; Torillo Erwin, Erwin ; Quirino Morales, Felix ; Lopez Arauz, Maria Fernanda
Author_Institution :
Adv. Lab. of Power, Electr. Traction & Modelling, Benemerita Univ. Autonoma de Puebla, Puebla, Mexico
fYear :
2015
fDate :
2-4 June 2015
Firstpage :
1
Lastpage :
5
Abstract :
The DC/DC Boost converter due to their physical characteristics have a relationship between the switching frequency and inductance value, the use of frequencies above 20 kHz reduces the required size of the inductor. To handle such switching frequencies is common to use MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) power semiconductor devices, these elements have losses due to parasite elements. This paper presents the impact that have the parasite elements into a boost convert through a program developed in Verilog-A.
Keywords :
DC-DC power convertors; power MOSFET; semiconductor device models; switching convertors; DC-DC boost converter; MOSFET; Verilog-A; inductor; metal-oxide semiconductor field-effect transistor; parasite elements; power semiconductor devices; switching frequency; Capacitance; Capacitors; Color; Hardware design languages; MOSFET; Semiconductor device modeling; MOSFET model; Verilog-A; boost converter; parasite elements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Power Quality Applications (PEPQA), 2015 IEEE Workshop on
Conference_Location :
Bogota
Type :
conf
DOI :
10.1109/PEPQA.2015.7168219
Filename :
7168219
Link To Document :
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