• DocumentCode
    3307697
  • Title

    Modeling and simulation of a MOSFET transistor in Verilog-A considering parasite elements

  • Author

    Cruz Dominguez Ghandy, Vladimir ; Tlapa Juarez, Manuel ; Bonilla Barranco, Hector ; Torillo Erwin, Erwin ; Quirino Morales, Felix ; Lopez Arauz, Maria Fernanda

  • Author_Institution
    Adv. Lab. of Power, Electr. Traction & Modelling, Benemerita Univ. Autonoma de Puebla, Puebla, Mexico
  • fYear
    2015
  • fDate
    2-4 June 2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The DC/DC Boost converter due to their physical characteristics have a relationship between the switching frequency and inductance value, the use of frequencies above 20 kHz reduces the required size of the inductor. To handle such switching frequencies is common to use MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) power semiconductor devices, these elements have losses due to parasite elements. This paper presents the impact that have the parasite elements into a boost convert through a program developed in Verilog-A.
  • Keywords
    DC-DC power convertors; power MOSFET; semiconductor device models; switching convertors; DC-DC boost converter; MOSFET; Verilog-A; inductor; metal-oxide semiconductor field-effect transistor; parasite elements; power semiconductor devices; switching frequency; Capacitance; Capacitors; Color; Hardware design languages; MOSFET; Semiconductor device modeling; MOSFET model; Verilog-A; boost converter; parasite elements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Power Quality Applications (PEPQA), 2015 IEEE Workshop on
  • Conference_Location
    Bogota
  • Type

    conf

  • DOI
    10.1109/PEPQA.2015.7168219
  • Filename
    7168219