Photoluminescence probing of InGaAs-InAl(Ga)As multiquantum well structures: a correlation to laser diode thresholds

Author

Rao, E.V.K. ; Quillec, M. ; Harmand, J.C. ; Sermage, B. ; Thibierge, H.

Author_Institution

Lab. de Bagneux, CNET, France

fYear

1992

fDate

21-24 April 1992

Firstpage

584

Abstract

Summary form only given. The photoluminescence (PL) properties of molecular-beam-epitaxy-grown InGaAs-InAl(Ga)As quantum well structures have been investigated. The ultimate aim of this work is to establish a workable relationship between PL efficiency and the MQW (multiquantum well) laser diode thresholds. To this end three types of samples have been analyzed: SQWs (single quantum wells) of nominal thickness approximately 30, approximately 60, and approximately 90 AA and located at different depths with varied buffer layer (InAlAs or InAlGaAs) thicknesses; MQWs identical to laser structures but without the top p-confinement layer; and complete MQW laser structures with grown-in p-n junction. The benefits of some specified heat treatments to improve the PL quality of the laser structures are presented and discussed.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat treatment; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor lasers; semiconductor quantum wells; InGaAs-InAlGaAs; MBE grown; grown-in p-n junction; heat treatments; laser diode thresholds; multiquantum well structures; photoluminescence; semiconductors; Buffer layers; Diode lasers; Heat treatment; Luminescence; Photoluminescence; Power lasers; Quantum well devices; Quantum well lasers; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235620

Filename

235620