Title :
Photoluminescence probing of InGaAs-InAl(Ga)As multiquantum well structures: a correlation to laser diode thresholds
Author :
Rao, E.V.K. ; Quillec, M. ; Harmand, J.C. ; Sermage, B. ; Thibierge, H.
Author_Institution :
Lab. de Bagneux, CNET, France
Abstract :
Summary form only given. The photoluminescence (PL) properties of molecular-beam-epitaxy-grown InGaAs-InAl(Ga)As quantum well structures have been investigated. The ultimate aim of this work is to establish a workable relationship between PL efficiency and the MQW (multiquantum well) laser diode thresholds. To this end three types of samples have been analyzed: SQWs (single quantum wells) of nominal thickness approximately 30, approximately 60, and approximately 90 AA and located at different depths with varied buffer layer (InAlAs or InAlGaAs) thicknesses; MQWs identical to laser structures but without the top p-confinement layer; and complete MQW laser structures with grown-in p-n junction. The benefits of some specified heat treatments to improve the PL quality of the laser structures are presented and discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heat treatment; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor lasers; semiconductor quantum wells; InGaAs-InAlGaAs; MBE grown; grown-in p-n junction; heat treatments; laser diode thresholds; multiquantum well structures; photoluminescence; semiconductors; Buffer layers; Diode lasers; Heat treatment; Luminescence; Photoluminescence; Power lasers; Quantum well devices; Quantum well lasers; Substrates; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235620
