FinFET transistors for power analog circuits, analysis of harmonic distortion

Author

Contreras, E. ; Granados-Luna, T. ; Perez-Sanchez, G.G. ; Rodriguez-Figueroa, R. ; Garcia Serrano, O.

Author_Institution

Tecnol. de Estudios Super. de Coacalco Unidad de Estudios Profesionales y de Investig. Estado de Mexico, Coacalco, Mexico

fYear

2015

fDate

2-4 June 2015

Firstpage

1

Lastpage

5

Abstract

This work present a study of the Harmonic distortion analysis in analog circuits using DC analysis, and it is evaluated the use of the Integral Function Method for the analysis in power electronics, since the use of electronic systems with finFET transistors in power systems could give advantages over traditional systems. Harmonic distortion can have detrimental effects on electronic circuits; unwanted distortion can increase the current in power systems. The power quality of distribution systems has a drastic effect on consumption and power regulation, and the power quality of distribution depends on the power electronic sources than can cause distortion in waveforms of the power system.

Keywords

MOSFET; analogue circuits; harmonic distortion; power electronics; power supply quality; FinFET transistor; harmonic distortion analysis; integral function method; power analog circuits; power quality; power system waveform; Analog circuits; FinFETs; Harmonic distortion; Mathematical model; Mirrors; Integral Function Method; Verilog-A; analog; harmonic distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Power Quality Applications (PEPQA), 2015 IEEE Workshop on

Conference_Location

Bogota

Type

conf

DOI

10.1109/PEPQA.2015.7168221

Filename

7168221