Liquid-phase epitaxial growth of Ga1-xInAsySb 1-y solid solution using Pb neutral solvent

Ga_1-xInAs_ySb_1-y solid solutions make it possible to produce optoelectronic devices for a mid-infrared (IR) spectral range, which is extremely important now for optical fiber communications, ecological monitoring, laser ranging systems and molecular spectroscopy. We propose a method of using lead (Pb) neutral solvent in GaInAsSb LPE-growth process in order to vary the Sb/Ga ratio in the liquid phase beyond the limits of the traditional investigations of melt-solid phase diagrams for the Ga-In-As-Sb-Pb system. As a result of our studies, we have successfully grown for the first time high quality Ga_1-xIn_xAs_ySb_1-x layers from the five-component Ga-In-As-Sb-Pb melt with x=0.14-0.17 at T=600°C and x=0.18, 0.19 at T=560°C