DocumentCode
330775
Title
Liquid-phase epitaxial growth of Ga1-xInAsySb 1-y solid solution using Pb neutral solvent
Author
Kunitsvna, E.V. ; Andreev, I.A. ; Charykov, N.A. ; Solov´ev, Yu.V. ; Yaltovfev, Yu.P.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1998
fDate
5-7 Oct 1998
Firstpage
55
Lastpage
58
Abstract
Ga1-xInAsySb1-y solid solutions make it possible to produce optoelectronic devices for a mid-infrared (IR) spectral range, which is extremely important now for optical fiber communications, ecological monitoring, laser ranging systems and molecular spectroscopy. We propose a method of using lead (Pb) neutral solvent in GaInAsSb LPE-growth process in order to vary the Sb/Ga ratio in the liquid phase beyond the limits of the traditional investigations of melt-solid phase diagrams for the Ga-In-As-Sb-Pb system. As a result of our studies, we have successfully grown for the first time high quality Ga1-xInxAsySb1-x layers from the five-component Ga-In-As-Sb-Pb melt with x=0.14-0.17 at T=600°C and x=0.18, 0.19 at T=560°C
Keywords
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; phase diagrams; semiconductor epitaxial layers; semiconductor growth; solid solutions; 560 C; 600 C; Ga1-xInAsySb1-y solid solution; GaInAsSb; lead neutral solvent; liquid phase epitaxial growth; melt-solid phase diagram; Epitaxial growth; Fiber lasers; Lead; Monitoring; Optical fiber communication; Optoelectronic devices; Solid lasers; Solvents; Spectroscopy; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730165
Filename
730165
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