Title :
An InGaP/GaAs HBT transimpedance amplifier for 10 Gbps optical communication
Author :
Jung, D.Y. ; Park, S.H. ; Lee, K.H. ; Chang, W.-J. ; Nam, E.S. ; Lim, J.W. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Taejeon, South Korea
Abstract :
Transimpedance amplifier (TIA) for 10 Gbps applications has been fabricated with InGaP/GaAs heterojunction bipolar transistors (HBTs). From the input-referred equivalent noise current density, the sensitivity was calculated. Eye diagram showed wide opened eye; when the input current was 58.6 μ Ap-p the output voltage was 33m Vp-p and rising/falling times were 35 psec. The chip size of fabricated transimpedance amplifier was 0.7 × 0.8 mm2. The measurement result showed transimpedance gain of 50 dBΩ and a -3dB bandwidth of 8.2 GHz. The differences between simulation and measurement were analyzed with chip layout considerations.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit layout; integrated circuit noise; integrated optoelectronics; optical communication equipment; optical fibre communication; -3dB bandwidth; 10 Gbit/s; 35 ps; 8.2 GHz; HBT transimpedance amplifier; InGaP-GaAs; TIA; chip layout considerations; input current; input-referred equivalent noise current density; optical communication; rising/falling times; Current density; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical fiber communication; Optical noise; Semiconductor device measurement; Semiconductor optical amplifiers; Signal analysis; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187866
