High-performance MSM photodetectors on semiinsulating InP:Fe/InGaAs:Fe/InP:Fe

Author

Hieronymi, F. ; Kuhl, D. ; Bottcher, E.H. ; Droge, E. ; Wolf, T. ; Bimberg, D.

Author_Institution

Inst. fuer Festkoerperphys. I, Tech. Univ., Berlin, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

561

Lastpage

564

Abstract

The design, fabrication, and characterization of a novel type of InGaAs metal-semiconductor-metal (MSM) detector are reported. Based on an Fe-doped InGaAs layer and a 50-nm-thin Fe-doped InP cap layer which enhances the Schottky-barrier height, MSM detectors with low dark current of 15 nA at 5-V bias and a breakdown voltage of 25 V are realized. The high-speed characteristics are investigated by response measurements in the time and in the frequency domain. FWHMs (full widths at half maximum) of the impulse response of 17 ps and 13 ps are obtained under illumination with subpicosecond light pulses having wavelengths of 1.3 mu m and 0.62 mu m, respectively. Using the optical heterodyne technique at a wavelength of 1.3 mu m, the frequency response is investigated over a wide range of optical input powers (9 mu W-540 mu W) and bias voltages.<>

Keywords

III-V semiconductors; Schottky effect; electric sensing devices; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; InP:Fe-InGaAs:Fe; Schottky-barrier height; breakdown voltage; dark current; frequency response; high-speed characteristics; impulse response; metal-semiconductor-metal; optical heterodyne technique; photodetectors; subpicosecond light pulses; Dark current; Detectors; Fabrication; Frequency measurement; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical mixing; Photodetectors; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235626

Filename

235626