• DocumentCode
    330783
  • Title

    Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions

  • Author

    Shen, Chih-Chieh ; Kefner, A.R. ; Berning, David W. ; Bernstein, Joseph B.

  • Author_Institution
    Center for Microelectron. Reliability, Maryland Univ., College Park, MD, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    12-15 Oct. 1998
  • Firstpage
    831
  • Abstract
    The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.
  • Keywords
    failure analysis; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; IGBT temperature; anode voltage avalanche sustaining waveforms; failure dynamics; insulated gate bipolar transistor; nondestructive test systems; power IGBTs; reverse bias safe operating area; turn-off; turn-off current level; unclamped inductive loading conditions; unclamped inductive switching; Anodes; Area measurement; Automatic testing; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Nondestructive testing; Predictive models; Shape; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-4943-1
  • Type

    conf

  • DOI
    10.1109/IAS.1998.730242
  • Filename
    730242