Title :
1000 A, 4400 V silicon rectifier diode for railway traction
Author :
Khanna, V.K. ; Kumar, A. ; Sood, S.C.
Author_Institution :
Semicond. Devices Area, Central Electron. Eng. Res. Inst., Pilani, India
Abstract :
Technology development of a high-power large-area mesa rectifier diode is described. For achieving the high reverse blocking capability, a shallow gradient deep Ga/Al impurity diffusion profile has been used in conjunction with surface electric field control. A positively-bevelled Mo-Si alloyed edge-contoured structure passivated by a high dielectric strength rubber, helped in realising the 4.4 kV diode. The behaviour of the reverse voltage-current characteristics of the diode has been studied at room temperature (25/spl deg/C) and elevated temperature (150/spl deg/C). The leakage current was 10 /spl mu/A at 4.4 kV at 25/spl deg/C and increased to 50 mA (maximum) at 4 kV at 150/spl deg/C. The variation of leakage current with process stages has been monitored. Influence of high voltage surface passivation on leakage current has also been investigated.
Keywords :
AC-DC power convertors; power semiconductor diodes; railways; rectifying circuits; solid-state rectifiers; traction; 10 muA; 1000 A; 150 C; 25 C; 4 kV; 4400 V; 50 mA; Ga-Al; Mo-Si; dielectric strength rubber; high-voltage surface passivation; leakage current; railway traction; reverse blocking capability; reverse voltage-current characteristics; shallow gradient deep Ga/Al impurity diffusion profile; silicon rectifier diode; surface electric field control; Dielectric breakdown; Diodes; Impurities; Leakage current; Rail transportation; Rectifiers; Silicon; Temperature; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730251
