Operation of power semiconductors at their thermal limit

Based on experience gained with Si power devices, a review is presented of some of the thermal limitations to the operation of power semiconductor devices, which are encountered in steady state operation, but also, much more stringently, under switching and pulse power transients. Devices based on SiC are expected to be capable of steady-state operation at much higher temperature than Si devices. Here the authors discuss predictable failure mechanisms of SiC devices at the extremely high temperatures reached under surge conditions, and their life expectancy under thermal cycling operation.