• DocumentCode
    330790
  • Title

    A destruction-free parameter extraction scheme for GTO models

  • Author

    Göhler, L. ; Langer, T. ; Sigg, J.

  • Author_Institution
    Univ. der Bundeswehr Munchen, Neubiberg, Germany
  • Volume
    2
  • fYear
    1998
  • fDate
    12-15 Oct. 1998
  • Firstpage
    999
  • Abstract
    This paper presents a physically based parameter extraction scheme for GTO models. The methods are discussed and demonstrated with an example. The comparison between simulated and measured device behaviour shows good agreement.
  • Keywords
    parameter estimation; semiconductor device models; thyristors; GTO models; destruction-free parameter extraction; measured device behaviour; simulated device behaviour; Capacitance measurement; Charge carrier lifetime; Curve fitting; Data mining; Doping profiles; Equations; Manufacturing; Paper technology; Parameter extraction; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-4943-1
  • Type

    conf

  • DOI
    10.1109/IAS.1998.730267
  • Filename
    730267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330790