DocumentCode :
330791
Title :
Improved charge-control models of power bipolar transistors
Author :
Vijayalakshmi, R. ; Trivedi, M. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume :
2
fYear :
1998
fDate :
12-15 Oct. 1998
Firstpage :
1011
Abstract :
This paper proposes two improved lumped circuit models for power bipolar junction transistors (BJT) which can predict the switching characteristics. Currently existing models in circuit simulators can achieve the delay time, rise time and the storage time performance in various switching topologies but fail to account for the decay of the excess stored charge in the drift region due to recombination. It is shown that the models that include the decay of the trapped charges due to recombination can exhibit current tail during hard-switching and soft switching turn-off (zero current switching and zero voltage switching) as seen in measured results. The results obtained from simulation are compared and validated with measured data. A closer prediction of switching losses and switching time of the device under various switching stresses and in various switching topologies is achieved with the use of these models.
Keywords :
bipolar transistor switches; electric charge; losses; lumped parameter networks; power bipolar transistors; power semiconductor switches; semiconductor device models; ZCS; ZVS; charge-control models; current tail; drift region; excess stored charge decay; hard-switching; lumped circuit models; power bipolar transistors; recombination; soft switching turn-off; switching characteristics prediction; switching losses prediction; switching stresses; switching time prediction; switching topologies; trapped charges decay; zero current switching; zero voltage switching; Bipolar transistor circuits; Bipolar transistors; Circuit simulation; Circuit topology; Delay effects; Predictive models; Switching circuits; Tail; Zero current switching; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-4943-1
Type :
conf
DOI :
10.1109/IAS.1998.730269
Filename :
730269
Link To Document :
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