Raman assessment of InP wafers

Author

Martin, P. ; Jimenez, J. ; Martin, E. ; Torres, A.

Author_Institution

Fisica de la Mater. Condensada, Fac. de Ciencias, Valladolid, Spain

fYear

1992

fDate

21-24 April 1992

Firstpage

542

Lastpage

545

Abstract

Raman spectroscopy was used to study two kinds of LEC (liquid encapsulated Czochralski) samples, namely, semiconducting n-type wafers doped with either Sn or S and semi-insulating Fe-doped wafer. Raman scattering is quite sensitive to the crystalline features of the materials. It provides an identification of the material as well as information on the crystal quality. In addition, in polar semiconductor such as InP, data on electric properties can be obtained. Measurements were carried out at different points of an [110] diameter of the InP wafers. The most sensitive parameter to the homogeneity was the bandwidth of the TO mode and the relative intensity of the second-order Raman peaks.<>

Keywords

III-V semiconductors; Raman spectra of inorganic solids; indium compounds; iron; sulphur; tin; Czochralski crystals; InP wafers; InP:Fe; InP:S; InP:Sn; Raman spectroscopy; TO mode; crystal quality; n-type; second-order Raman peaks; semi-insulating; semiconductor; Crystalline materials; Degradation; Indium phosphide; Mirrors; Optical materials; Optical scattering; Oxidation; Raman scattering; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235631

Filename

235631