DocumentCode
330796
Title
Advanced technology for a new NPT-IGBT module design
Author
Miyashita, S. ; Yoshiwatari, S. ; Kobayashi, S. ; Sakurai, K.
Author_Institution
Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan
Volume
2
fYear
1998
fDate
12-15 Oct. 1998
Firstpage
1061
Abstract
This paper introduces the technologies for a newly developed 1200 V/600 A 1 in 1 NPT-IGBT module. This IGBT has low power dissipation loss, low noise, soft switching and higher reliability. These features have been realized by advanced simulation and stress analysis for 3D-structures.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device packaging; 1200 V; 3D-structures; 600 A; NPT-IGBT module design; advanced semiconductor technology; advanced simulation; noise; power IGBTs; power dissipation loss; reliability; soft switching; stress analysis; Impedance; Insulated gate bipolar transistors; Isolation technology; Motor drives; Power dissipation; Power electronics; Production facilities; Servomechanisms; Temperature; Uninterruptible power systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location
St. Louis, MO, USA
ISSN
0197-2618
Print_ISBN
0-7803-4943-1
Type
conf
DOI
10.1109/IAS.1998.730278
Filename
730278
Link To Document