Title :
Cu and Ag diffused semi-insulating InP and GaAs
Author :
Xie, K. ; Wie, C.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
High-resistivity (up to 10/sup 5/ Omega -cm) p-type GaAs was obtained by thermal diffusion of Cu and Ag in conducting n-type GaAs wafers. The electrical properties of GaAs:Cu and GaAs:Ag are governed by a deep acceptor level. The semi-insulating InP (up to 10/sup 7/ Omega -cm) could be obtained by thermal diffusion of Cu at 800 degrees C for 20 to 36 h in conducting n-type and p-type InP wafers. Photoluminescence quenching was observed in highly resistive InP:Cu. The qualitative behavior of electrical and optical properties of InP:Cu could be explained by a Cu precipitate compensation model.<>
Keywords :
III-V semiconductors; copper; deep levels; diffusion in solids; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; silver; GaAs:Ag; GaAs:Cu; InP:Ag; InP:Cu; deep acceptor level; photoluminescence quenching; precipitate compensation model; resistivity; semi-insulating; semiconductors; thermal diffusion; Annealing; Gallium arsenide; Hall effect; III-V semiconductor materials; Indium phosphide; Pollution measurement; Semiconductor process modeling; Substrates; Temperature measurement; Thermal conductivity;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235635
