Title :
Control of Fe-precipitates in Fe-doped InP
Author :
Liu, X. ; Ye, S. ; Jiao, J. ; Zhao, J. ; Cao, H. ; Sun, W.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
An attempt has been made, on the basis of the three-levels model and considerations relative to the existence of interstitial atoms, to correlate the resistivity of InP crystal with the Fe weight fraction and the background concentration of the polycrystalline InP used as the starting material for growing semi-insulating crystals with low Fe concentration. The calculated and experimental results are in good agreement. The correlation between Fe weight fraction and solidified InP that is free of Fe-precipitates was obtained experimentally.<>
Keywords :
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; indium compounds; interstitials; iron; precipitation; Fe weight fraction; Fe-precipitates; InP:Fe; interstitial atoms; resistivity; semi-insulating crystals; semiconductor; Conductivity; Crystalline materials; Crystals; Equations; Indium phosphide; Iron; Microwave devices; Neodymium; Sun; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235636
