DocumentCode
3308019
Title
Control of Fe-precipitates in Fe-doped InP
Author
Liu, X. ; Ye, S. ; Jiao, J. ; Zhao, J. ; Cao, H. ; Sun, W.
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
1992
fDate
21-24 April 1992
Firstpage
522
Lastpage
525
Abstract
An attempt has been made, on the basis of the three-levels model and considerations relative to the existence of interstitial atoms, to correlate the resistivity of InP crystal with the Fe weight fraction and the background concentration of the polycrystalline InP used as the starting material for growing semi-insulating crystals with low Fe concentration. The calculated and experimental results are in good agreement. The correlation between Fe weight fraction and solidified InP that is free of Fe-precipitates was obtained experimentally.<>
Keywords
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; indium compounds; interstitials; iron; precipitation; Fe weight fraction; Fe-precipitates; InP:Fe; interstitial atoms; resistivity; semi-insulating crystals; semiconductor; Conductivity; Crystalline materials; Crystals; Equations; Indium phosphide; Iron; Microwave devices; Neodymium; Sun; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235636
Filename
235636
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