Deep level investigation in Fe-doped semi-insulating indium phosphide crystals

Author

Fornari, R. ; Santic, B. ; Desnica, U.

Author_Institution

MASPEC-CNR Inst., Parma, Italy

fYear

1992

fDate

21-24 April 1992

Firstpage

511

Lastpage

514

Abstract

Several Fe-doped InP wafers were investigated by thermally stimulated current (TSC) and thermo-electric effect spectroscopy (TEES), both in the dark and after illumination. Other deep levels besides the main deep level due to iron were investigated. A comparison between the present deep level study and other literature shows that only two levels, among those found here, are also detected in undoped n-type InP, namely, the hole trap at 0.19 eV and the electron trap at 0.35 eV. This probably means that the TSC peaks appearing at about 100 and 170 K are related to native defects and not to iron doping.<>

Keywords

III-V semiconductors; deep levels; electron traps; hole traps; indium compounds; iron; thermally stimulated currents; thermoelectric effects in semiconductors and insulators; InP:Fe; deep levels; electron trap; hole trap; semi-insulating; semiconductor; thermally stimulated current; thermo-electric effect spectroscopy; Charge carrier processes; Conductivity; Crystals; Electron traps; Indium phosphide; Iron; Lighting; Photoconductivity; Spectroscopy; Ultrasonic variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235639

Filename

235639