Analog and digital performance of MISFETs on p- and n-GaInAs

GaInAs MISFETs with pyrolytic SiO/sub 2/ isolator on n- and p-GaInAs have been investigated with regard to analog and digital performance. The 1.7- mu m gate length MISFETs on n-GaInAs and p-GaInAs have transconductances of 100 mS/mm and 40 mS/mm, cutoff frequencies (f/sub T/) of 14 GHz and 2 GHz, and maximum frequencies of oscillation (f/sub max/) of 18 GHz and 6 GHz, respectively. Due to the self-aligned process and the better carrier confinement, the MISFETs on p-GaInAs show higher f/sub max//f/sub T/ values. An inverter on p-GaInAs with a high static voltage gain of -13.5 and high noise margin has been integrated to a 31-stage ring oscillator, proving the reproducibility of the technology with a pyrolytic SiO/sub 2/ isolator. The delay time of one stage is 6 ns, corresponding to an intrinsic frequency of 200 MHz, which shows that the operation point of the ring oscillator is not optimized.<>