High performance E/D-mode InAlAs/InGaAs HIGFET technology and integrated logic functions

Author

Chan, Y.-J. ; Pavlidis, D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

499

Lastpage

502

Abstract

InAlAs/InGaAs E (enhancement)- and D (depletion)-HIGFETs (heterostructure insulated-gate FETs) have been integrated on the same wafer using selective ion implantation technology. An extremely high uniformity of threshold voltage has been demonstrated for both devices ( sigma V/sub th/=8 mV/E-mode and 12 mV/D-mode). E/D-mode inverters showed a high DC gain ( approximately 20), while retaining an acceptable value of noise margin of 0.45 V. NAND logic gates have been tested up to 400 MHz, showing functional characteristics. These results suggest the suitability of E/D-mode HIGFETs for high-speed logic circuit applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; ion implantation; logic gates; 400 MHz; DC gain; E/D-mode inverters; HIGFET; InAlAs-InGaAs; NAND logic gates; high-speed logic circuit applications; integrated logic functions; selective ion implantation; semiconductors; threshold voltage; Circuit noise; FETs; Indium compounds; Indium gallium arsenide; Insulation; Inverters; Ion implantation; Logic gates; Logic testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235642

Filename

235642