DocumentCode :
3308224
Title :
Morphological defects in InP layers grown by gas-source molecular beam epitaxy
Author :
Rakennus, K. ; Hakkarainen, T. ; Tappura, K. ; Asonen, H. ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fYear :
1992
fDate :
21-24 April 1992
Firstpage :
171
Lastpage :
174
Abstract :
InP
Keywords :
III-V semiconductors; chemical beam epitaxial growth; crystal defects; crystal morphology; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface structure; GSMBE; InP layers; gas-source molecular beam epitaxy; morphological defects; surface defects; Chemical technology; Indium phosphide; Inductors; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Optical microscopy; Substrates; Surface morphology; Tail;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235649
Filename :
235649
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3308224
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