Title :
Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate
Author :
Fathimulla, A. ; Hier, H. ; Abrahams, J. ; Loughran, T.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
The authors report the monolithic integration of InGaAs/InAlAs MODFETs and RTDs MBE grown using selective epitaxy on InP which has been bonded to a silicon substrate. The study demonstrates the feasibility of monolithically integrating III-V devices having different heterostructures with silicon devices.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; resonant tunnelling devices; semiconductor growth; tunnel diodes; III-V devices; InGaAs-InAlAs; InGaAs/InAlAs MODFETs; InP-Si; InP-bonded-to Si substrate; MBE; MODFET; RTD; Si; monolithic integration; selective epitaxy; Bonding; Epitaxial growth; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235650
