Title :
GaInAs(P)-InP quantum well structures for optoelectronic devices grown by MOVPE using DADI as a novel liquid In precursor
Author :
Scholz, F. ; Rudeloff, R. ; Henle, B. ; Harle, V. ; Scheuble, E. ; Tutken, T. ; Hangleiter, A. ; Pohl, L.
Author_Institution :
Physikalisches Inst., Stuttgart Univ., Germany
Abstract :
The novel liquid In precursor DADI (dimethylaminopropyl dimethylindium) has been used to grow multiquantum well structures which show a line splitting, in photoluminescence due to monolayer fluctuations. Moreover, GaInAs-GaInAsP-InP separate confinement multiquantum well modulator structures have been grown. By measuring the quantum confined Stark effect in electroabsorption experiments, a good agreement with theory could be obtained. Thus, it was shown that DADI can be used to grow high-quality heterostructures suitable for optoelectronic devices.<>
Keywords :
III-V semiconductors; Stark effect; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; luminescence of inorganic solids; optical modulation; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; DADI; GaInAs-GaInAsP-InP; MOVPE; MQW; dimethylaminopropyl dimethylindium; electroabsorption; high-quality heterostructures; line splitting; liquid In precursor; monolayer fluctuations; optoelectronic devices; photoluminescence; quantum confined Stark effect; separate confinement multiquantum well modulator structures; Chemicals; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical modulation; Optoelectronic devices; Potential well; Safety; Stability; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235653
