Title :
Highly uniform InGaAsP/InP growth in a multiwafer rotating disk reactor by MOCVD
Author :
McKee, M.A. ; Yoo, B.-S. ; Stall, R.A.
Author_Institution :
EMCORE Corp., Somerset, NJ, USA
Abstract :
Highly uniform InGaAsP/InP epitaxial growth has been performed using a 12.5-cm-diameter susceptor capable of holding three symmetrically placed, 5-cm-diameter wafers. Uniformity was investigated in thickness, wavelength, lattice mismatch, and doping. With a 5-mm edge exclusion, photoluminescence mapping results of InGaAsP layers show that the total variation in peak wavelength is less than +or-5 nm. Results from wafer-to-wafer uniformity in a single run show that the standard deviation over three-wafer mapping is approximately 2.62 nm. The lattice mismatch mapping also shows the standard deviation of 2.21*10/sup -4/ with the maximum variation of 8.55*10/sup -4/. These uniformities are comparable to the results of single-wafer systems.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 12.5 cm; 5 cm; InGaAsP/InP epitaxial growth; MOCVD; doping; edge exclusion; highly uniform InGaAsP-InP; lattice mismatch; lattice mismatch mapping; multiwafer rotating disk reactor; peak wavelength; photoluminescence mapping results; thickness; three-wafer mapping; wafer-to-wafer uniformity; wavelength; Doping; Electrical resistance measurement; Gases; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; MOCVD; Photoluminescence; Scanning electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235654
