Current blocking behaviour of p/n/SI-InP:Fe/n structures at temperatures between 25 and 200 degrees C

Author

Lourdudoss, S. ; Nordell, N. ; Borglind, I. ; Landgren, G. ; Keller, C.

Author_Institution

Swedish Inst. of Microelectron., Kista, Sweden

fYear

1992

fDate

21-24 April 1992

Firstpage

133

Lastpage

135

Abstract

The authors report the current blocking behavior of certain p/n/SI-InP:Fe/n structures at various temperatures between 25 an 200 degrees C. The doping level and the thickness of the hole barrier n-InP layer were varied. As long as the thickness and doping level are at least 0.3 mu m and 5*10/sup 17/ cm/sup -3/ respectively, these structures are almost as resistive as n/SI-InP:Fe/n within less than two orders of magnitude up to 200 degrees C. However, if the hole barrier layer is not sufficiently doped, the p/n/SI-InP:Fe/n structure behaves similarly to the p/SI-InP:Fe/n structure.<>

Keywords

III-V semiconductors; doping profiles; hole traps; indium compounds; iron; semiconductor junctions; semiconductor lasers; 0.3 micron; 25 to 200 degC; BH laser; InP:Fe; current blocking behavior; doping level; hole barrier thickness; p/n/SI-InP:Fe/n structures; Conductivity; Doping; Electron traps; Epitaxial growth; Indium phosphide; Inductors; Iron; Microelectronics; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235659

Filename

235659