Growth of semi-insulating InP:Fe in a low pressure hydride VPE system using elemental iron and ferrocene as dopant sources

The authors have demonstrated the suitability of the low-pressure hydride VPE (vapor-phase epitaxy) process for the growth of semi-insulating InP:Fe using two different iron sources. The elemental iron source that is commonly used in hydride VPE systems offers the advantage of a simple and cost-efficient setup due to its similarity to the indium source. It allows the incorporation of iron at very high concentrations, above 10/sup 19/ cm/sup -3/. To achieve a uniform vertical iron distribution of the incorporated iron, special care must be taken when performing the growth. The organic ferrocene source also allows the iron doping of InP at doping levels up to 10/sup 18/ cm/sup -3/. In contrast to the elemental iron source a kinetically limited Fe incorporation is found. A high vertical uniformity of the Fe incorporation can be obtained easily. By using both iron sources, high specific resistivities in the 10/sup 8/-10/sup 9/- Omega -cm region can be achieved.<>