Title :
Beryllium doping to InP and GaInAsP by chemical beam epitaxy (CBE)
Author :
Uchida, T. ; Yokouchi, N. ; Miyamoto, T. ; Inaba, Y. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The authors examined the optical characteristics of Be-doped InP and GaInAsP and growing GaInAsP/InP double-heterostructures for SE (surface-emitting) lasers. Good photoluminescence characteristics of Be-doped InP and GaInAsP up to high hole concentrations were obtained. These Be-doped materials were applied to GaInAsP/InP DH (double heterostructure) laser materials growth. From the evaluation of the normalized threshold current density for stripe-contact lasers, an optical quality which can be applied to GaInAsP/InP SE lasers was obtained. These results show that CBE (chemical beam epitaxy) is a feasible technique for growing highly Be-doped GaInAsP/InP and shows the possibility of well-behaved Be-doping for long-wavelength laser materials including distributed Bragg reflectors and multi-quantum wells.<>
Keywords :
III-V semiconductors; beryllium; carrier density; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor doping; semiconductor growth; semiconductor lasers; Be doping; CBE; GaInAsP/InP double-heterostructures; GaInAsP:Be-InP:Be; chemical beam epitaxy; distributed Bragg reflectors; high hole concentrations; long-wavelength laser materials; multi-quantum wells; normalized threshold current density; optical characteristics; optical quality; photoluminescence characteristics; stripe-contact lasers; surface emitting lasers; Chemical lasers; DH-HEMTs; Doping; Epitaxial growth; Indium phosphide; Laser beams; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235664
