Model for incorporation of zinc in MOCVD growth of Ga/sub 0.5/In/sub 0.5/P

Author

Kurtz, S.R. ; Olson, J.M. ; Kibbler, A.E. ; Asher, S.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

109

Lastpage

112

Abstract

Data are presented for the Zn doping of Ga/sub 0.5/In/sub 0.5/P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga/sub 0.5/In/sub 0.5/P deposition by metal-organic chemical vapor deposition (MOCVD). A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.<>

Keywords

III-V semiconductors; gallium compounds; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; zinc; Ga/sub 0.5/In/sub 0.5/P:Zn; MOCVD growth; V/III ratio; Zn doping; Zn flow; group V coverage; growth rate; hole concentration; metal-organic chemical vapor deposition; Atmospheric modeling; Chemical vapor deposition; Doping; Gallium arsenide; Hydrogen; MOCVD; Organic chemicals; Renewable energy resources; Semiconductor process modeling; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235665

Filename

235665