Title :
InGaAs/InP heterojunction bipolar transistors grown with gas source molecular beam epitaxy
Author :
Feld, S.A. ; Geib, K.M. ; Beyette, F.R., Jr. ; An, X. ; Hafich, M.J. ; Robinson, G.Y. ; Wilmsen, C.W.
Author_Institution :
Colorado State Univ., Fort Collins, CO, USA
Abstract :
The effects of emitter-base doping and base setback layers on recombination, emitter efficiency, and gain of InGaAs/InP heterojunction bipolar phototransistors (HPTs) were studied experimentally. Six different HPT designs were investigated; three had setback layers and three did not. All of the HPTs were fabricated from gas source MBE (molecular-beam epitaxy)-grown lattice-matched InGaAs/InP layers which were chemically etched into square mesas 380 mu m on a side. The wafers with no setback layer and high emitter-base doping produced HPTs with maximum gains only in the 50-200 range. Theoretical analysis suggests that the large variation in gain with different layer dopings and setbacks is strongly influenced by the location and width of the energy notch caused by the conduction band offset.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; phototransistors; semiconductor doping; semiconductor growth; sputter etching; 380 micron; InGaAs-InP; base setback layers; chemically etched; conduction band offset; emitter efficiency; emitter-base doping; energy notch; gain; gas source MBE; heterojunction bipolar phototransistors; recombination; semiconductors; square mesas; Doping; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical detectors; Optical sensors; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235670
