DocumentCode :
3308605
Title :
Study of strain effects in high performance double heterostructure In/sub x/Ga/sub 1-x/As (0.57
Author :
Kusters, A.M. ; Stollenwerk, M. ; Kohl, A. ; Heuken, M. ; Heime, K.
Author_Institution :
Inst. fuer Halbleitertech., RWTH, Aachen, Germany
fYear :
1992
fDate :
21-24 April 1992
Firstpage :
371
Lastpage :
374
Abstract :
Strained In/sub x/Ga/sub 1-x/As/InP (0.57>
Keywords :
Hall effect; III-V semiconductors; deformation; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 10 to 50 nm; 13 mS/mm; 300 K; 450 MHz to 2.6 GHz; 62 mS/mm; 77 K; Hall mobility; In/sub x/Ga/sub 1-x/As-InP; doping layer; p-channel MODFETs; semiconductors; strain effects; transconductance; Capacitance-voltage characteristics; Capacitive sensors; Carrier confinement; Doping; Frequency; Hall effect; Indium gallium arsenide; Indium phosphide; Strain measurement; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235674
Filename :
235674
Link To Document :
