Title :
In situ characterization of remote plasma treated and passivated InP by integral photoluminescence
Author :
Kiel, F. ; Kulisch, W. ; Kassing, R.
Author_Institution :
Inst. of Tech. Phys., Kassel, Germany
Abstract :
The authors report on a downstream PECVD (plasma-enhanced chemical vapor deposition) apparatus which allows low-temperature deposition of passivating and insulating films on III/V materials using silico organics as source compounds. In combination with an arrangement for the measurement of the integral photoluminescence signal, this apparatus allows process control and optimization in view of the electronic properties of the semiconductor surface. This technique allows deposition of silicon dioxide at a temperature below 150 degrees C. C(V) and I(V) measurements performed on SiO/sub 2//Si MIS capacitors showed the electronic characteristics of the oxide films to be satisfactory; C(V) curves of SiO/sub 2//InP capacitors revealed that the InP surface is not degraded by the deposition process.<>
Keywords :
III-V semiconductors; indium compounds; luminescence of inorganic solids; passivation; photoluminescence; plasma CVD; semiconductor growth; semiconductor-insulator boundaries; surface electron states; InP; MIS capacitors; SiO/sub 2/-InP; SiO/sub 2/-Si; electronic properties; insulating films; integral photoluminescence; passivation; plasma-enhanced chemical vapor deposition; semiconductor surface; Capacitors; Chemical vapor deposition; Indium phosphide; Insulation; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Semiconductor films;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235681
