The p-Ge THz laser in low B-field: properties under pulsed and mode locked operation

Author

Hovenier, J.N. ; Diez, M.C. ; Klaassen, T.O. ; Wenckebach, W. Th ; Muravjov, A.V. ; Pavlov, S.G. ; Shastin, V.N.

Author_Institution

Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands

fYear

1998

fDate

3-4 Sep 1998

Firstpage

90

Lastpage

93

Abstract

A detailed study of the optical output of the p-Ge hot hole laser, emitting in the THz range, has been started for (normal) pulsed- as well as for active mode locked operation. Results on wavelength dependent gain and pulse shape for the low magnetic field action range under long pulsed operation are presented. The recently developed technique to achieve active mode locking is described. Results on the shape of the pulses in the small signal gain as well as in the saturated gain regime under mode locked operation are given; FWHM pulse widths of 100 ps have been observed

Keywords

elemental semiconductors; germanium; hot carriers; laser mode locking; semiconductor lasers; submillimetre wave generation; submillimetre wave lasers; 100 ps; FWHM pulse widths; Ge; hot hole laser; low B-field; low magnetic field action range; mode locked operation; optical output; pulse shape; pulsed operation; saturated gain regime; small signal gain; wavelength dependent gain; Hot carriers; Laser mode locking; Laser modes; Optical pulse shaping; Optical pulses; Optical saturation; Pulse shaping methods; Shape; Space vector pulse width modulation; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731672

Filename

731672