Title :
Outdiffusion from high dose Mg p/sup +/-contact implantations in InP
Author :
van Berlo, W.H. ; Landgren, G.
Author_Institution :
Swedish Inst. of Microelectron., Kista, Sweden
Abstract :
The behavior of magnesium implanted into InP during rapid thermal annealing was studied. The dopant activation was found to depend strongly on implanted dose and implantation temperature. Low activation for high dose (10/sup 15/ cm/sup -2/) implantations was found to be a result of a strong outdiffusion. A large variation in the apparent activation energy for samples implanted at room temperature and 300 degrees C was also found.<>
Keywords :
III-V semiconductors; annealing; indium compounds; magnesium; rapid thermal processing; semiconductor doping; surface diffusion; 300 K; 300 degC; InP:Mg; activation energy; dopant activation; implantation temperature; rapid thermal annealing; semiconductors; strong outdiffusion; Annealing; Implants; Indium phosphide; Tail;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235690
