Title :
The interface properties of ITO/p-InP due to DC magnetron sputter disposition in hydrogen
Author :
Li, X. ; Gessert, T.A. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The authors investigate the surface modification of InP by hydrogenation that occurs during fabrication of the indium tin oxide (ITO)/InP device. They attempt to establish relationships between hydrogen pressure in the sputtering environment and the change in the near-surface properties of p-type InP substrates. Specific near-surface properties will include the carrier concentration and junction depth. Because it has been previously observed that solar cell performance is affected by post-deposition heat treatment (PDHT), this will be systematically performed and studied. From this analysis, it is shown that effects due to hydrogenation can be relaxed by PDHT, resulting in a Schottky-like ITO/InP junction behavior.<>
Keywords :
III-V semiconductors; carrier density; hydrogen; indium compounds; interface electron states; semiconductor doping; semiconductor-insulator boundaries; sputtering; tin compounds; H/sub 2/; In/sub 2-x/Sn/sub x/O/sub 3-y/-InP; Schottky-like junction; carrier concentration; hydrogenation; junction depth; post-deposition heat treatment; solar cell performance; sputtering environment; surface modification; Capacitance-voltage characteristics; Current density; Doping; Hydrogen; Indium phosphide; Indium tin oxide; Magnetic properties; Radiative recombination; Space charge; Surface cleaning;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235691
