Schottky characteristics of n-type AlInAs grown by MOCVD

The Schottky characteristics of n-type AlInAs grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) have been investigated. The bias dependence of reverse current was similar to those observed in Schottky contacts on oxidized GaAs and oxidized InP. The presence of oxygen atoms at the metal/AlInAs interface was revealed by Auger electron spectroscopy measurements. It is likely that the leaky nature of AlInAs Schottky contacts arises because of the existence of an interfacial layer. Based on this investigation of the Schottky diodes, the use of lower donor concentrations in the AlInAs layer under the gate will further reduce the leakage current of HEMTs (high electron mobility transistors).<>