0.1 mu m MOVPE grown InAlAs/InGaAs HEMT´s with above 150 GHz operation capability

Author

Ng, G.I. ; Pavlidis, D. ; Kwon, Y. ; Brock, T. ; Davies, J.I. ; Clarke, G. ; Rees, P.K.

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

18

Lastpage

21

Abstract

State-of-the-art device performance has been demonstrated using lattice-matched InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by MOVPE (metal-organic vapor phase epitaxy). A record f/sub T/ value of 150 GHz was obtained using 0.1- mu m mushroom-gate technology. An f/sub max/ of 200 GHz has also been recorded for the devices. Care has been taken in selecting the buffer layer for good carrier confinement and low leakage. A thin InAlAs layer was used for this purpose. It is believed that MOVPE offers an excellent alternative to other growth techniques for realizing InAlAs/InGaAs HEMTs for ultra-high frequency applications.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.1 micron; 150 GHz; 200 GHz; EHF; InAlAs-InGaAs; MOVPE; buffer layer; good carrier confinement; high electron mobility transistors; lattice-matched InAlAs/InGaAs HEMTs; low leakage; metal-organic vapor phase epitaxy; semiconductor; ultra-high frequency applications; Diodes; Doping; Epitaxial growth; Epitaxial layers; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Lithography; Optical buffering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235700

Filename

235700