Title :
In-situ photoluminescence surface state spectroscopy for InP and InGaAs
Author :
Hasegawa, H. ; Saitoh, T. ; Numata, K.-i. ; Sawada, T.
Author_Institution :
Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
A novel in-situ photoluminescence (PL) surface state spectroscopy technique is presented. This method allows an in-situ, contactless, and nondestructive determination of the N/sub ss/ distributions on technologically important ´free´ surfaces of semiconductors. The basic principle and a rigorous computer analysis procedure are described. The proposed technique is successfully applied to various surfaces of InP and In/sub 0.53/Ga/sub 0.47/As. The measured N/sub ss/ distributions on InP and InGaAs are U-shaped and consistent with the DIGS (disorder-induced gap state) model. The usefulness of the Si ICL (interface control layer) technique was confirmed.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; surface electron states; In/sub 0.53/Ga/sub 0.47/As; InGaAs; InP; disorder-induced gap state; interface control layer; photoluminescence surface state spectroscopy; semiconductors; Charge carrier density; Chemical technology; Contacts; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Photoluminescence; Shape measurement; Spectroscopy; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235702
